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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
1993 1
1996 4
1997 3
1998 2
1999 5
2000 1
2001 4
2002 3
2003 4
2004 5
2005 9
2006 12
2007 10
2008 7
2009 13
2010 10
2011 25
2012 23
2013 19
2014 27
2015 19
2016 22
2017 18
2018 19
2019 18
2020 23
2021 9
2022 11
2023 16
2024 11

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Page 1
Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: shin jc. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
309 results